Single-step fabrication process of 1-D photonic crystals coupled to nanocolumnar TiO2 layers to improve DSC efficiency

The present work proposes the use of a TiO2 electrode coupled to a one-dimensional photonic crystal (1DPC), all formed by the sequential deposition of nanocolumnar thin films by physical vapor oblique angle deposition (PV-OAD), to enhance the optical and electrical performance of DSCs while transparency is preserved. We demonstrate that this approach allows building an architecture combining a non-dispersive 3 µm of TiO2 electrode and 1 µm TiO2-SiO2 1DPC, both columnar, in a single-step process. The incorporation of the photonic structure is responsible for a rise of 30% in photovoltaic efficiency, as compared with a transparent cell with a single TiO2 electrode. Detailed analysis of the spectral dependence of the photocurrent demonstrates that the 1DPC improves light harvesting efficiency by both back reflection and optical cavity modes confinement within the TiO2 films, thus increasing the overall performance of the cellEuropean Union FP7/2007- 2013Ministerio de Economía y Competitividad CSD2008-00023, CSD2007-00007, MAT2011-23593, MAT2013-40852-R, MAT2013-42900-PJunta de Andalucía TEP8067, FQM-6900, FQM 2265, FQM 57

Synthesis, characterization and performance of robust poison-resistant ultrathin film yttria stabilized zirconia – nickel anodes for application in solid electrolyte fuel cells

We report on the synthesis of undoped ∼5 μm YSZ-Ni porous thin films prepared by reactive pulsed DC magnetron sputtering at an oblique angle of incidence. Pre-calcination of the amorphous unmodified precursor layers followed by reduction produces a film consisting of uniformly distributed tilted columnar aggregates having extensive three-phase boundaries and favorable gas diffusion characteristics. Similarly prepared films doped with 1.2 at.% Au are also porous and contain highly dispersed gold present as Ni-Au alloy particles whose surfaces are strongly enriched with Au. With hydrogen as fuel, the performance of the undoped thin film anodes is comparable to that of 10–20 times thicker typical commercial anodes. With a 1:1 steam/carbon feed, the un-doped anode cell current rapidly falls to zero after 60 h. In striking contrast, the initial performance of the Au-doped anode is much higher and remains unaffected after 170 h. Under deliberately harsh conditions the performance of the Au-doped anodes decreases progressively, almost certainly due to carbon deposition. Even so, the cell maintains some activity after 3 days operation in dramatic contrast with the un-doped anode, which stops working after only three hours of use. The implications and possible practical application of these findings are discussed.European Union 298300Ministerio de Economía y Competitividad MAT2013‐40852R, 201560E05

Isotope Labelling for Reaction Mechanism Analysis in DBD Plasma Processes

Dielectric barrier discharge (DBD) plasmas and plasma catalysis are becoming an alternative procedure to activate various gas phase reactions. A low-temperature and normal operating pressure are the main advantages of these processes, but a limited energy efficiency and little selectivity control hinder their practical implementation. In this work, we propose the use of isotope labelling to retrieve information about the intermediate reactions that may intervene during the DBD processes contributing to a decrease in their energy efficiency. The results are shown for the wet reforming reaction of methane, using D2O instead of H2O as reactant, and for the ammonia synthesis, using NH3/D2/N2 mixtures. In the two cases, it was found that a significant amount of outlet gas molecules, either reactants or products, have deuterium in their structure (e.g., HD for hydrogen, CDxHy for methane, or NDxHy for ammonia). From the analysis of the evolution of the labelled molecules as a function of power, useful information has been obtained about the exchange events of H by D atoms (or vice versa) between the plasma intermediate species. An evaluation of the number of these events revealed a significant progression with the plasma power, a tendency that is recognized to be detrimental for the energy efficiency of reactant to product transformation. The labelling technique is proposed as a useful approach for the analysis of plasma reaction mechanisms

Colored semi-transparent Cu-Si oxide thin films prepared by magnetron sputtering

Colored semi-transparent Cu-Si oxide thin films have been prepared by reactive magnetron sputtering from a single cathode of copper-silicon composition. Thin films of different composition and optical response were obtained by changing process parameters like the relative amount of copper in the target and the O2/Ar mixture of the reactive plasma gas. The film characteristics were analyzed by several techniques. Their optical properties (refractive index, absorption coefficient, color) have been correlated with the process parameters used in the film preparation as well as with the film stoichiometry and chemistry.Ministerio de Ciencia e Innovación CEN-20072014, MAT2010-18447, MAT2010-21228, CSD2008–00023Junta de Andalucía P09-TEP5283, CTS-518

Influence of the angular distribution function of incident particles on the microstructure and anomalous scaling behavior of thin films

The microstructure and the scaling properties of films grown by plasma enhanced chemical vapor deposition are reproduced with a discrete model that takes into account the angular distribution function of the particles and the lateral growth of the films. Both the experimental and simulated surfaces exhibit a granular microstructure and an anomalous scaling behavior characterized by values of the growth exponent β that vary with the scale of measurement. Depending on the angular distribution function used in the model, values of β ranging from 0.86 to 0.2 are obtained

Scaling behavior and mechanism of formation of Si O2 thin films grown by plasma-enhanced chemical vapor deposition

This paper reports a study of the kinetic roughening of Si O2 thin films prepared by plasma-enhanced chemical vapor deposition (PECVD). Tetramethylsilane has been used as a precursor, and the synthesis has been carried out under remote and in-plasma configurations. The analysis of surface topography of the films by atomic force microscopy shows an anomalous scaling behavior that cannot be represented by the Family-Vicsec scaling relation of dynamic scaling theory. The application of different methods for obtaining the roughness exponent α yields different values of this exponent (α=0.7 for the height-height correlation function and α=1.3 for the power spectral density function for long deposition times) in all experimental conditions. Moreover, a strong variation of the α exponent with deposition time has been determined for the samples grown in remote mode. This correlates with the presence of a crossover region of the growth exponent β, which varies from a first value of 1.3 for low deposition times to another of 0.3 for longer deposition times. Such a variation is not found for the samples grown in the plasma, characterized by a β value of 0.28. The results obtained can be explained by the combined effect in the growth process of a low diffusivity of the physisorbed species along with the existence of nonlocal interactions due to shadowing effects. These two assumptions are in agreement with the empirical knowledge existing about the kinetics of the growth of Si O2 thin films by PECVD and establish a link between the scaling properties of the films with the surface chemistry during the film growth.Ministerio de Educación y Ciencia MAT2004-01558 y MAT2007-6576

Influence of irrigation conditions in the germination of plasma treated Nasturtium seeds

Plasma treatments had emerged as a useful technique to improve seed germination. In this work we investigate the influence of different irrigation conditions and plasma treatments on the germination of nasturtium seeds. During plasma treatment, seeds experience a progressive weight loss as a function of treatment time that has been associated to water release, a process that is more pronounced after longer plasma treatment times. Seeds treated for short times (<30 s) are able to germinate more efficiently than untreated specimen under hydric stress (drought conditions), while plasma treatments for longer times (up to 300 s) impaired germination independently on irrigation conditions. Characterization analysis of plasma treated seeds by FTIR-ATR, SEM/EDX and XPS showed that plasma treatment affected the chemical state of pericarp while, simultaneously, induced a considerable increase in the seeds water uptake capacity. The decrease in germination efficiency found after plasma treatment for long times, or for short times under optimum irrigation conditions, has been attributed to that the excess of water accumulated in the pericarp hampers the diffusion up to the embryo of other agents like oxygen which are deemed essential for germination.España FEDER y MINECO MINECO (projects MAT2013-40852-R, MAT2016-79866-R, MINECOCSIC 201560E055)España, RECUPERA 2020 y Junta de Andalucía project P12-2265 M

Growth of silver on ZnO and SnO2 thin films intended for low emissivity applications

In the present work we have investigated the relationships existing between the optical properties and the growth mechanism, microstructure and surface roughness of SnO2 and ZnO oxide films prepared by magnetron sputtering under conditions resembling those utilized in industry. Thin films of these oxides with different thicknesses were characterized by atomic force microscopy, glancing incidence X-ray diffraction (GIXRD), X-ray reflectometry and spectroscopic ellipsometry. The roughness evolution of the film properties (density, surface roughness and refraction index) as a function of their thickness has been evaluated within the concepts of the Dynamic Scaling Theory of thin film growth. Zinc oxide films were rougher than tin oxide films of similar thickness, indicating a different growing mechanism for the two materials. Silver was evaporated onto the surface of the two oxide thin films and its earlier stages of nucleation studied by background analysis of the X-ray photoemission spectra. A different nucleation mechanism was found depending on the nature of the oxide acting as substrate. The superior performance of the zinc oxide based low emissive coatings is related with a better wetting of silver on the surface of this oxide despite the comparatively lower roughness of the tin oxide layers.Junta de Andalucía P09-CTS- 5189 TEP5283 FQM-6900España Ministerio de Competitividad CONSOLIDER CSD2008-00023 MAT2010-21228 MAT2010-1844

Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy

Iron oxide thin films as hematite (α-Fe2O3) have been prepared by ion beam induced chemical vapor deposition. Very compact and dense films are obtained by this procedure. The thin films have been grown by ombardment of the substrate surfaces with O2+ ions or mixtures of O2+ and Ar+ ions, while a volatile precursor of iron [i.e., Fe(CO)5] is dosed onto the substrate surface. In the latter case, Ar atoms are incorporated within the iron oxide lattice. Atomic force microscopy, Rutherford backscattering spectroscopy, and x-ray photoelectron spectroscopy were utilized to characterize the films’ surface morphology, stoichiometry and chemical state. The film structure has been analyzed by grazing angle x-ray diffraction (XRD) and infrared spectroscopies. In particular, infrared spectroscopy has permitted a thorough structural characterization of the films, even in the cases where XRD does not provide information about the structure. Thus, when O2 1 ions are used for the synthesis, iron oxide thin films grow with a hematite structure with the c axis of the crystallites perpendicular to the film surface. However, when an Ar+/O2+ ion mixture is used, the thin films have a hematite structure with the c axis of the crystallites oriented parallel to the film surface.Comisión Interministerial de Ciencia y Tecnología (CICYT) MAT97-0689NATO CRG 97020

TiO2-SiO2 one-dimensional photonic crystals of controlled porosity by glancing angle physical vapour deposition

Herein we present a synthetic route to attain porous one-dimensional photonic crystals of high optical quality. The method employed, based on the alternate deposition of TiO2 and SiO2 porous layers by glancing angle physical vapour deposition, yields a highly accessible interconnected pore network throughout the entire multilayer structure. Furthermore, it allows a strict control over the average size and density of the interstitial sites, which results in the precise tuning of the refractive index of the individual layers and thus of the optical response of the ensemble. The controlled environmental response of the multilayer is confirmed by the optical monitoring of the infiltration of liquids of different refractive index.España Ministerio de Ciencia e innovación MAT2008-02166 MAT2007-65764Consolider Projects CSD2007-00007 CSD2008-00023Junta de Andalucía FQM-3579 TEP227